IPW60R045CPFKSA1
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Infineon Technologies IPW60R045CPFKSA1

Manufacturer No:
IPW60R045CPFKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPW60R045CPFKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 60A TO247-3
Delivery:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id:3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6800 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):431W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
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Similar Products

Part Number IPW60R045CPFKSA1 IPW60R075CPFKSA1   IPW60R045CPAFKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 39A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 44A, 10V 75mOhm @ 26A, 10V 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 3.5V @ 3mA 3.5V @ 1.7mA 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V 116 nC @ 10 V 190 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 100 V 4000 pF @ 100 V 6800 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 431W (Tc) 313W (Tc) 431W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1 PG-TO247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

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