IPW50R399CPFKSA1
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Infineon Technologies IPW50R399CPFKSA1

Manufacturer No:
IPW50R399CPFKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPW50R399CPFKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 560V 9A TO247-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):560 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:399mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id:3.5V @ 330µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:890 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
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Similar Products

Part Number IPW50R399CPFKSA1 IPW50R199CPFKSA1   IPW50R299CPFKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 560 V 550 V 550 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 17A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 399mOhm @ 4.9A, 10V 199mOhm @ 9.9A, 10V 299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 330µA 3.5V @ 660µA 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 45 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 100 V 1800 pF @ 100 V 1190 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 83W (Tc) 139W (Tc) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1 PG-TO247-3-1
Package / Case TO-247-3 TO-247-3 TO-247-3

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