Infineon Technologies-IPW50R190CE - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500 V
Current - Continuous Drain (Id) @ 25°C:	24.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	13V
Rds On (Max) @ Id, Vgs:	190mOhm @ 6.2A, 13V
Vgs(th) (Max) @ Id:	3.5V @ 510µA
Gate Charge (Qg) (Max) @ Vgs:	47.2 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1137 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	152W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO247-3-41
Package / Case:	TO-247-3

Infineon Technologies IPW50R190CE