IPU95R750P7AKMA1
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Infineon Technologies IPU95R750P7AKMA1

Manufacturer No:
IPU95R750P7AKMA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPU95R750P7AKMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 950V 9A TO251-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 220µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:712 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):73W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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$2.43
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Similar Products

Part Number IPU95R750P7AKMA1 IPU95R450P7AKMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 950 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 4.5A, 10V 450mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 220µA 3.5V @ 360µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 712 pF @ 400 V 1053 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 73W (Tc) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO251-3 PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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