IPU80R2K8CEBKMA1
  • Share:

Infineon Technologies IPU80R2K8CEBKMA1

Manufacturer No:
IPU80R2K8CEBKMA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPU80R2K8CEBKMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 1.9A TO251-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

-
451

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPU80R2K8CEBKMA1 IPU80R2K8CEAKMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc) 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.8Ohm @ 1.1A, 10V 2.8Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 120µA 3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 100 V 290 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 42W (Tc) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO251-3 PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

IPP60R105CFD7XKSA1
IPP60R105CFD7XKSA1
Infineon Technologies
MOSFET N CH
UPA2800T1L-E1-AY
UPA2800T1L-E1-AY
Renesas Electronics America Inc
MOSFET N-CH 30V 17A 8DFN
IXTX5N250
IXTX5N250
IXYS
MOSFET N-CH 2500V 5A PLUS247-3
FDP8441
FDP8441
onsemi
MOSFET N-CH 40V 23A/80A TO220-3
STP16N65M5
STP16N65M5
STMicroelectronics
MOSFET N-CH 650V 12A TO220-3
SIR4604LDP-T1-GE3
SIR4604LDP-T1-GE3
Vishay Siliconix
N-CHANNEL 60 V (D-S) MOSFET POWE
AO7408
AO7408
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 20V 2A SC70-6
AON7380
AON7380
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 24A 8DFN
NTMFS4927NT1G
NTMFS4927NT1G
onsemi
MOSFET N-CH 30V 7.9A/38A 5DFN
IRL2203NSTRRPBF
IRL2203NSTRRPBF
Infineon Technologies
MOSFET N-CH 30V 116A D2PAK
SPB73N03S2L08T
SPB73N03S2L08T
Infineon Technologies
MOSFET N-CH 30V 73A TO263-3
NTD24N06L-1G
NTD24N06L-1G
onsemi
MOSFET N-CH 60V 24A IPAK

Related Product By Brand

ESD5V3S1U02LRHE6327XTSA1
ESD5V3S1U02LRHE6327XTSA1
Infineon Technologies
TVS DIODE 5.3VWM 11VC TSLP-2-17
BSZ036NE2LSATMA1
BSZ036NE2LSATMA1
Infineon Technologies
MOSFET N-CH 25V 16A/40A TSDSON
IPP60R600CP
IPP60R600CP
Infineon Technologies
N-CHANNEL POWER MOSFET
IMZA65R083M1HXKSA1
IMZA65R083M1HXKSA1
Infineon Technologies
SILICON CARBIDE MOSFET, PG-TO247
IPB80N06S207ATMA1
IPB80N06S207ATMA1
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
XC2288H200F100LABKXUMA1
XC2288H200F100LABKXUMA1
Infineon Technologies
IC MCU 16/32B 1.6MB FLSH 144LQFP
KT230GEG
KT230GEG
Infineon Technologies
AUTOMOTIVE PRESSURE SENSOR
CY8C3444AXA-096
CY8C3444AXA-096
Infineon Technologies
IC MCU 8BIT 16KB FLASH 100TQFP
MB90F546GSPFR-G
MB90F546GSPFR-G
Infineon Technologies
IC MCU 16BIT 256KB FLASH 100QFP
MB90349CASPFV-G-167E1
MB90349CASPFV-G-167E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 100LQFP
MB90922NCSPMC-GS-132E1
MB90922NCSPMC-GS-132E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 120LQFP
S25FL256SAGBHIT03
S25FL256SAGBHIT03
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 24BGA