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| Part Number | IPU80R1K4CEAKMA1 | IPU80R1K4CEBKMA1 | IPU50R1K4CEAKMA1 | IPU80R1K0CEAKMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Discontinued at Digi-Key | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V | 800 V | 500 V | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) | 3.9A (Tc) | 3.1A (Tc) | 5.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 13V | 10V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.3A, 10V | 1.4Ohm @ 2.3A, 10V | 1.4Ohm @ 900mA, 13V | 950mOhm @ 3.6A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 240µA | 3.9V @ 240µA | 3.5V @ 70µA | 3.9V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V | 23 nC @ 10 V | 8.2 nC @ 10 V | 31 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 100 V | 570 pF @ 100 V | 178 pF @ 100 V | 785 pF @ 100 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 63W (Tc) | 63W (Tc) | 42W (Tc) | 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | PG-TO251-3 | PG-TO251-3 | PG-TO251-3 | PG-TO251-3-341 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
