IPU60R600C6BKMA1
  • Share:

Infineon Technologies IPU60R600C6BKMA1

Manufacturer No:
IPU60R600C6BKMA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPU60R600C6BKMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 7.3A TO251-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:20.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

-
165

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPU60R600C6BKMA1 IPU60R600C6AKMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc) 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 2.4A, 10V 600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 200µA 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 20.5 nC @ 10 V 20.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V 440 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 63W (Tc) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO251-3 PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

NTH4L022N120M3S
NTH4L022N120M3S
onsemi
SIC MOS TO247-4L 22MOHM 1200V
APT10090BLLG
APT10090BLLG
Microchip Technology
MOSFET N-CH 1000V 12A TO247
2SK2425-E
2SK2425-E
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
STFI10NK60Z
STFI10NK60Z
STMicroelectronics
MOSFET N-CH 600V 10A I2PAKFP
MCAC30N06Y-TP
MCAC30N06Y-TP
Micro Commercial Co
MOSFET N-CH 60V 30A DFN5060
PSMN1R8-40YLC,115
PSMN1R8-40YLC,115
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
CSD13380F3
CSD13380F3
Texas Instruments
MOSFET N-CH 12V 3.6A 3PICOSTAR
IXFK80N60P3
IXFK80N60P3
IXYS
MOSFET N-CH 600V 80A TO264AA
SIHG35N60E-GE3
SIHG35N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 32A TO247AC
SQJ858AEP-T1_BE3
SQJ858AEP-T1_BE3
Vishay Siliconix
MOSFET N-CH 40V 58A PPAK SO-8
BUK7M19-60EX
BUK7M19-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 35.8A LFPAK33
IRF7815PBF
IRF7815PBF
Infineon Technologies
MOSFET N-CH 150V 5.1A 8SO

Related Product By Brand

BAS125-04WE6327
BAS125-04WE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
IPI60R250CP
IPI60R250CP
Infineon Technologies
COOLMOS N-CHANNEL POWER MOSFET
IRFS4010PBF
IRFS4010PBF
Infineon Technologies
MOSFET N-CH 100V 180A D2PAK
SAL-TC237L-32F200S AB
SAL-TC237L-32F200S AB
Infineon Technologies
IC MICROCONTROLLER
MB90022PF-GS-433
MB90022PF-GS-433
Infineon Technologies
IC MCU 16BIT 100QFP
MB90347ESPMC-GS-283E1
MB90347ESPMC-GS-283E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
S25FS128SDSBHV200
S25FS128SDSBHV200
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 24BGA
S29JL064J60BHA003
S29JL064J60BHA003
Infineon Technologies
IC FLASH 64MBIT PARALLEL 48FBGA
S29GL01GT13TFNV13
S29GL01GT13TFNV13
Infineon Technologies
IC FLASH 1GBIT PARALLEL 56TSOP
S25FL128SAGBHEA00
S25FL128SAGBHEA00
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 24BGA
CY7C199D-10ZXI
CY7C199D-10ZXI
Infineon Technologies
IC SRAM 256KBIT PAR 28TSOP I
CY7C1643KV18-450BZC
CY7C1643KV18-450BZC
Infineon Technologies
IC SRAM 144MBIT PARALLEL 165FBGA