IPU60R2K1CEBKMA1
  • Share:

Infineon Technologies IPU60R2K1CEBKMA1

Manufacturer No:
IPU60R2K1CEBKMA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPU60R2K1CEBKMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 2.3A TO251-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.1Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:6.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):22W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

$0.15
957

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPU60R2K1CEBKMA1 IPU60R2K1CEAKMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc) 3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.1Ohm @ 760mA, 10V 2.1Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 60µA 3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 6.7 nC @ 10 V 6.7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 100 V 140 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 22W (Tc) 38W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO251-3 PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

IRF840SPBF
IRF840SPBF
Vishay Siliconix
MOSFET N-CH 500V 8A D2PAK
IPS135N03LG
IPS135N03LG
Infineon Technologies
N-CHANNEL POWER MOSFET
IRFP141
IRFP141
Harris Corporation
N-CHANNEL POWER MOSFET
FDI040N06
FDI040N06
Fairchild Semiconductor
MOSFET N-CH 60V 120A I2PAK
SQ2361AEES-T1_GE3
SQ2361AEES-T1_GE3
Vishay Siliconix
MOSFET P-CH 60V 2.8A SSOT23
IRLTS6342TRPBF
IRLTS6342TRPBF
Infineon Technologies
MOSFET N-CH 30V 8.3A 6TSOP
SQM40014EM_GE3
SQM40014EM_GE3
Vishay Siliconix
MOSFET N-CH 40V 200A TO263-7
SIB4317EDK-T1-GE3
SIB4317EDK-T1-GE3
Vishay Siliconix
P-CHANNEL 30-V (D-S) MOSFET POWE
PJF7NA80_T0_00001
PJF7NA80_T0_00001
Panjit International Inc.
800V N-CHANNEL MOSFET
IRF3707PBF
IRF3707PBF
Infineon Technologies
MOSFET N-CH 30V 62A TO220AB
2SK0601G0L
2SK0601G0L
Panasonic Electronic Components
MOSFET N-CH 80V 500MA MINIP3-F2
NVTFS5826NLTWG
NVTFS5826NLTWG
onsemi
MOSFET N-CH 60V 20A 8WDFN

Related Product By Brand

BSC036NE7NS3GATMA1
BSC036NE7NS3GATMA1
Infineon Technologies
MOSFET N-CH 75V 100A TDSON
IPD082N10N3GATMA1
IPD082N10N3GATMA1
Infineon Technologies
MOSFET N-CH 100V 80A TO252-3
IPD053N06NATMA1
IPD053N06NATMA1
Infineon Technologies
MOSFET N-CH 60V 18A/45A TO252-3
IPD11DP10NMATMA1
IPD11DP10NMATMA1
Infineon Technologies
TRENCH >=100V PG-TO252-3
IRF7494TR
IRF7494TR
Infineon Technologies
MOSFET N-CH 150V 5.2A 8-SOIC
IRF7704TRPBF
IRF7704TRPBF
Infineon Technologies
MOSFET P-CH 40V 4.6A 8TSSOP
BSM150GB60DLCHOSA1
BSM150GB60DLCHOSA1
Infineon Technologies
IGBT MOD 600V 180A 595W
SIGC03T60EX7SA1
SIGC03T60EX7SA1
Infineon Technologies
IGBT 3 CHIP 600V 4A WAFER
MB90598GPF-G-150-JNE1
MB90598GPF-G-150-JNE1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100QFP
CY7C2263KV18-550BZXC
CY7C2263KV18-550BZXC
Infineon Technologies
NO WARRANTY
CY7C1470BV25-200BZI
CY7C1470BV25-200BZI
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CYPD3122-40LQXIT
CYPD3122-40LQXIT
Infineon Technologies
IC MCU 32BIT 128KB FLASH 40QFN