IPU60R1K5CEBKMA1
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Infineon Technologies IPU60R1K5CEBKMA1

Manufacturer No:
IPU60R1K5CEBKMA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPU60R1K5CEBKMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 3.1A TO251
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):28W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number IPU60R1K5CEBKMA1 IPU60R1K0CEBKMA1   IPU60R1K5CEAKMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc) 4.3A (Tc) 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V -
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.1A, 10V 1Ohm @ 1.5A, 10V 1.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA 3.5V @ 130µA 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V 13 nC @ 10 V 9.4 nC @ 10 V
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 100 V 280 pF @ 100 V 200 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 28W (Tc) 37W (Tc) -
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-251 TO-251 PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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