IPU60R1K4C6AKMA1
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Infineon Technologies IPU60R1K4C6AKMA1

Manufacturer No:
IPU60R1K4C6AKMA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPU60R1K4C6AKMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 3.2A TO251-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):28.4W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number IPU60R1K4C6AKMA1 IPU60R1K4C6BKMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc) 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.1A, 10V 1.4Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V 9.4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 100 V 200 pF @ 100 V
FET Feature - Super Junction
Power Dissipation (Max) 28.4W (Tc) 28.4W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 155°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO251-3 PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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