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| Part Number | IPU60R1K0CEAKMA1 | IPU60R1K0CEAKMA2 | IPU80R1K0CEAKMA1 | IPU60R1K0CEBKMA1 | IPU60R1K5CEAKMA1 |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Not For New Designs | Obsolete | Discontinued at Digi-Key | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | 600 V | 800 V | 600 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) | 4.3A (Tc) | 5.7A (Tc) | 4.3A (Tc) | 3.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | 10V | 10V | 10V | - |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V | 1Ohm @ 1.5A, 10V | 950mOhm @ 3.6A, 10V | 1Ohm @ 1.5A, 10V | 1.5Ohm @ 1.1A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA | 3.5V @ 130µA | 3.9V @ 250µA | 3.5V @ 130µA | 3.5V @ 90µA |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | 13 nC @ 10 V | 31 nC @ 10 V | 13 nC @ 10 V | 9.4 nC @ 10 V |
| Vgs (Max) | - | ±20V | ±20V | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V | 280 pF @ 100 V | 785 pF @ 100 V | 280 pF @ 100 V | 200 pF @ 100 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | - | 61W (Tc) | 83W (Tc) | 37W (Tc) | - |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | PG-TO251-3 | PG-TO251-3 | PG-TO251-3-341 | TO-251 | PG-TO251-3 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
