IPU50R950CEBKMA1
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Infineon Technologies IPU50R950CEBKMA1

Manufacturer No:
IPU50R950CEBKMA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPU50R950CEBKMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 4.3A TO251-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):13V
Rds On (Max) @ Id, Vgs:950mOhm @ 1.2A, 13V
Vgs(th) (Max) @ Id:3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:231 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):34W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number IPU50R950CEBKMA1 IPU50R950CEBTMA1   IPU50R950CEAKMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Obsolete
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V - 500 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc) - 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V - 13V
Rds On (Max) @ Id, Vgs 950mOhm @ 1.2A, 13V - 950mOhm @ 1.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 100µA - 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V - 10.5 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 231 pF @ 100 V - 231 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 34W (Tc) - 53W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Through Hole - Through Hole
Supplier Device Package PG-TO251-3 - PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA - TO-251-3 Short Leads, IPak, TO-251AA

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