IPTC012N08NM5ATMA1
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Infineon Technologies IPTC012N08NM5ATMA1

Manufacturer No:
IPTC012N08NM5ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPTC012N08NM5ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 40A/396A HDSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:40A (Ta), 396A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs:219 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:16000 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HDSOP-16-2
Package / Case:16-PowerSOP Module
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$8.93
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Similar Products

Part Number IPTC012N08NM5ATMA1 IPTC014N08NM5ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 40A (Ta), 396A (Tc) 37A (Ta), 330A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 100A, 10V 1.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 275µA 3.8V @ 230µA
Gate Charge (Qg) (Max) @ Vgs 219 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 16000 pF @ 40 V 13000 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 3.8W (Ta), 375W (Tc) 3.8W (Ta), 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-HDSOP-16-2 PG-HDSOP-16-2
Package / Case 16-PowerSOP Module 16-PowerSOP Module

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