IPT020N10N3ATMA1
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Infineon Technologies IPT020N10N3ATMA1

Manufacturer No:
IPT020N10N3ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPT020N10N3ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 300A 8HSOF
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 150A, 10V
Vgs(th) (Max) @ Id:3.5V @ 272µA
Gate Charge (Qg) (Max) @ Vgs:156 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11200 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-1
Package / Case:8-PowerSFN
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$9.93
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Similar Products

Part Number IPT020N10N3ATMA1 IPT020N10N5ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc) 31A (Ta), 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 150A, 10V 2mOhm @ 150A, 10V
Vgs(th) (Max) @ Id 3.5V @ 272µA 3.8V @ 202µA
Gate Charge (Qg) (Max) @ Vgs 156 nC @ 10 V 152 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 11200 pF @ 50 V 11000 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 375W (Tc) 273W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-HSOF-8-1 PG-HSOF-8-1
Package / Case 8-PowerSFN 8-PowerSFN

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