IPSH6N03LB G
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Infineon Technologies IPSH6N03LB G

Manufacturer No:
IPSH6N03LB G
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPSH6N03LB G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 50A TO251-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3-11
Package / Case:TO-251-3 Stub Leads, IPak
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Similar Products

Part Number IPSH6N03LB G IPSH6N03LA G  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 25 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.3mOhm @ 50A, 10V 6.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 40µA 2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V 19 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 15 V 2390 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 83W (Tc) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO251-3-11 PG-TO251-3-11
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak

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