IPSA70R1K4CEAKMA1
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Infineon Technologies IPSA70R1K4CEAKMA1

Manufacturer No:
IPSA70R1K4CEAKMA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPSA70R1K4CEAKMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 700V 5.4A TO251-3
Delivery:
Payment:
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iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):700 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):53W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number IPSA70R1K4CEAKMA1 IPS70R1K4CEAKMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V 700 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc) 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1A, 10V 1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 100µA 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V 10.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 100 V 225 pF @ 100 V
FET Feature - Super Junction
Power Dissipation (Max) 53W (Tc) 53W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO251-3 PG-TO251-3-11
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Stub Leads, IPak

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