IPS80R900P7AKMA1
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Infineon Technologies IPS80R900P7AKMA1

Manufacturer No:
IPS80R900P7AKMA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPS80R900P7AKMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 6A TO251-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 500 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number IPS80R900P7AKMA1 IPS80R600P7AKMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.2A, 10V 600mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 110µA 3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 500 V 570 pF @ 500 V
FET Feature - -
Power Dissipation (Max) 45W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO251-3 PG-TO251-3-342
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Stub Leads, IPak

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