IPS65R1K5CEAKMA1
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Infineon Technologies IPS65R1K5CEAKMA1

Manufacturer No:
IPS65R1K5CEAKMA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPS65R1K5CEAKMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 3.1A TO251
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):28W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251
Package / Case:TO-251-3 Stub Leads, IPak
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Similar Products

Part Number IPS65R1K5CEAKMA1 IPS60R1K5CEAKMA1   IPS65R1K0CEAKMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Not For New Designs Discontinued at Digi-Key
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V - 650 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc) - 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1A, 10V - 1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 100µA - 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V - 15.3 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 100 V - 328 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 28W (Tc) - 37W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) - -40°C ~ 150°C (TJ)
Mounting Type Through Hole - Through Hole
Supplier Device Package TO-251 - TO-251
Package / Case TO-251-3 Stub Leads, IPak - TO-251-3 Stub Leads, IPak

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