IPS65R1K0CEAKMA2
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Infineon Technologies IPS65R1K0CEAKMA2

Manufacturer No:
IPS65R1K0CEAKMA2
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPS65R1K0CEAKMA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 7.2A TO251-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:15.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:328 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3-342
Package / Case:TO-251-3 Stub Leads, IPak
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Similar Products

Part Number IPS65R1K0CEAKMA2 IPS65R1K0CEAKMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 7.2A (Tc) 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 1.5A, 10V 1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 200µA 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 15.3 nC @ 10 V 15.3 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 328 pF @ 100 V 328 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 68W (Tc) 37W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO251-3-342 TO-251
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak

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