IPS105N03LGAKMA1
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Infineon Technologies IPS105N03LGAKMA1

Manufacturer No:
IPS105N03LGAKMA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPS105N03LGAKMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 35A TO251-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3-11
Package / Case:TO-251-3 Stub Leads, IPak
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Similar Products

Part Number IPS105N03LGAKMA1 IPS135N03LGAKMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 30A, 10V 13.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 10 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 15 V 1000 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 38W (Tc) 31W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO251-3-11 PG-TO251-3-11
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak

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