IPS06N03LA G
  • Share:

Infineon Technologies IPS06N03LA G

Manufacturer No:
IPS06N03LA G
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPS06N03LA G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 50A TO251-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2653 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3-11
Package / Case:TO-251-3 Stub Leads, IPak
0 Remaining View Similar

In Stock

-
509

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPS06N03LA G IPS06N03LZ G   IPS09N03LA G   IPSH6N03LA G   IPS03N03LA G   IPS04N03LA G   IPS05N03LA G  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V 25 V 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc) 50A (Tc) 50A (Tc) 90A (Tc) 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.9mOhm @ 30A, 10V 5.9mOhm @ 30A, 10V 8.8mOhm @ 30A, 10V 6.2mOhm @ 50A, 10V 3.4mOhm @ 60A, 10V 4mOhm @ 50A, 10V 5.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 40µA 2V @ 40µA 2V @ 20µA 2V @ 30µA 2V @ 70µA 2V @ 80µA 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V 22 nC @ 5 V 13 nC @ 5 V 19 nC @ 5 V 41 nC @ 5 V 41 nC @ 5 V 25 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2653 pF @ 15 V 2653 pF @ 15 V 1642 pF @ 15 V 2390 pF @ 15 V 5200 pF @ 15 V 5199 pF @ 15 V 3110 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 83W (Tc) 83W (Tc) 63W (Tc) 71W (Tc) 115W (Tc) 115W (Tc) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package PG-TO251-3-11 PG-TO251-3-11 PG-TO251-3-11 PG-TO251-3-11 PG-TO251-3-11 PG-TO251-3-11 PG-TO251-3-11
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak

Related Product By Categories

FDMS86550
FDMS86550
onsemi
MOSFET N-CH 60V 32A/155A POWER56
BSZ120P03NS3GATMA1
BSZ120P03NS3GATMA1
Infineon Technologies
MOSFET P-CH 30V 11A/40A 8TSDSON
FDS6609A
FDS6609A
Fairchild Semiconductor
MOSFET P-CH 30V 6.3A 8SOIC
NTMFS5C404NLTT3G
NTMFS5C404NLTT3G
onsemi
MOSFET N-CH 40V 5DFN
IXFA130N15X3TRL
IXFA130N15X3TRL
IXYS
MOSFET N-CH 150V 130A TO263
IXTH102N15T
IXTH102N15T
IXYS
MOSFET N-CH 150V 102A TO247
PHD9NQ20T,118
PHD9NQ20T,118
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A DPAK
IPD036N04LGBTMA1
IPD036N04LGBTMA1
Infineon Technologies
MOSFET N-CH 40V 90A TO252-3
IPD50R380CEATMA1
IPD50R380CEATMA1
Infineon Technologies
MOSFET N-CH 500V 14.1A TO252-3
SUD50N02-09P-GE3
SUD50N02-09P-GE3
Vishay Siliconix
MOSFET N-CH 20V 20A TO252
TSM15N50CZ C0G
TSM15N50CZ C0G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 500V 14A TO220
RF4C100BCTCR
RF4C100BCTCR
Rohm Semiconductor
MOSFET P-CH 20V 10A HUML2020L8

Related Product By Brand

BAV 99T E6433
BAV 99T E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SC75
BFP460E6327HTSA1
BFP460E6327HTSA1
Infineon Technologies
RF TRANS NPN 5.8V 22GHZ SOT343-4
BCX70HE6433HTMA1
BCX70HE6433HTMA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
IRFZ44NLPBF
IRFZ44NLPBF
Infineon Technologies
MOSFET N-CH 55V 49A TO262
SPD07N60C3T
SPD07N60C3T
Infineon Technologies
MOSFET N-CH 650V 7.3A TO252-3
BTS462TXT
BTS462TXT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
CY90F456PMCR-G-JNE1
CY90F456PMCR-G-JNE1
Infineon Technologies
IC MCU 16BIT 32KB FLASH 48LQFP
MB95F478HPMC2-G-108-SNE2
MB95F478HPMC2-G-108-SNE2
Infineon Technologies
IC MCU 8BIT 60KB FLASH 64LQFP
MB89485LAPFM-G-224-CNE1
MB89485LAPFM-G-224-CNE1
Infineon Technologies
IC MCU 8BIT 16KB MROM 64QFP
CY62168GE30-45BVXI
CY62168GE30-45BVXI
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA
CY7C1069AV33-10BAC
CY7C1069AV33-10BAC
Infineon Technologies
IC SRAM 16MBIT PARALLEL 60FBGA
CY7C1329S-133AXC
CY7C1329S-133AXC
Infineon Technologies
IC SRAM 2MBIT PARALLEL 100TQFP