IPS050N03LGBKMA1
  • Share:

Infineon Technologies IPS050N03LGBKMA1

Manufacturer No:
IPS050N03LGBKMA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPS050N03LGBKMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CHANNEL 30V 50A TO251-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:3200 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3-11
Package / Case:TO-251-3 Stub Leads, IPak
0 Remaining View Similar

In Stock

-
557

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPS050N03LGBKMA1 IPS040N03LGBKMA1   IPS050N03LGAKMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 90A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 30A, 10V 4mOhm @ 30A, 10V 5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 38 nC @ 10 V 31 nC @ 10 V
Vgs (Max) - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 15 V 3900 pF @ 15 V 3200 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 68W (Tc) 79W (Tc) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO251-3-11 PG-TO251-3-11 PG-TO251-3-11
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak

Related Product By Categories

HUF76633S3ST
HUF76633S3ST
Fairchild Semiconductor
MOSFET N-CH 100V 39A D2PAK
IXTQ36N50P
IXTQ36N50P
IXYS
MOSFET N-CH 500V 36A TO3P
STF15N95K5
STF15N95K5
STMicroelectronics
MOSFET N-CH 950V 12A TO220FP
NVMFS6H836NLT1G
NVMFS6H836NLT1G
onsemi
MOSFET N-CH 80V 16A/77A 5DFN
IPA65R150CFDXKSA2
IPA65R150CFDXKSA2
Infineon Technologies
MOSFET N-CH 650V 22.4A TO220
BSP372 E6327
BSP372 E6327
Infineon Technologies
MOSFET N-CH 100V 1.7A SOT223-4
IXTP180N055T
IXTP180N055T
IXYS
MOSFET N-CH 55V 180A TO220AB
IXTU05N100
IXTU05N100
IXYS
MOSFET N-CH 1000V 750MA TO251
STH180N10F3-6
STH180N10F3-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
NVTJD4105CT1G
NVTJD4105CT1G
onsemi
MOSFET 20V 0.63A SC-88
SIHB30N60E-E3
SIHB30N60E-E3
Vishay Siliconix
MOSFET N-CH 600V 29A D2PAK
RQ6E080AJTCR
RQ6E080AJTCR
Rohm Semiconductor
MOSFET N-CH 30V 8A TSMT6

Related Product By Brand

EVALPS540140ATOBO1
EVALPS540140ATOBO1
Infineon Technologies
EVAL IRPS5401
BCR 169F E6327
BCR 169F E6327
Infineon Technologies
TRANS PREBIAS PNP 250MW TSFP-3
SPP24N60CFD
SPP24N60CFD
Infineon Technologies
N-CHANNEL POWER MOSFET
IPB60R170CFD7ATMA1
IPB60R170CFD7ATMA1
Infineon Technologies
MOSFET N-CH 600V 14A TO263-3-2
IRF2807S
IRF2807S
Infineon Technologies
MOSFET N-CH 75V 82A D2PAK
IR2125SPBF
IR2125SPBF
Infineon Technologies
IC GATE DRVR HIGH-SIDE 16SOIC
MB90022PF-GS-332E1
MB90022PF-GS-332E1
Infineon Technologies
IC MCU 16BIT 100QFP
MB96F615RBPMC-GT-N2E1
MB96F615RBPMC-GT-N2E1
Infineon Technologies
IC MCU 16BIT 160KB FLASH 48LQFP
CY14B101K-SP25XC
CY14B101K-SP25XC
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 48SSOP
CY62138FLL-45ZSXIT
CY62138FLL-45ZSXIT
Infineon Technologies
IC SRAM 2MBIT PARALLEL 32TSOP II
CYBLE-224116-01
CYBLE-224116-01
Infineon Technologies
RX TXRX MOD BLUETOOTH CHIP SMD
CY9AF142NBBGL-GK9E1
CY9AF142NBBGL-GK9E1
Infineon Technologies
IC MCU 32BIT 160KB FLASH 112BGA