IPS04N03LA G
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Infineon Technologies IPS04N03LA G

Manufacturer No:
IPS04N03LA G
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPS04N03LA G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 50A TO251-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5199 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3-11
Package / Case:TO-251-3 Stub Leads, IPak
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Similar Products

Part Number IPS04N03LA G IPS04N03LB G   IPS05N03LA G   IPS06N03LA G   IPS09N03LA G   IPSH4N03LA G   IPS03N03LA G  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 30 V 25 V 25 V 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc) 50A (Tc) 50A (Tc) 50A (Tc) 90A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V 4.3mOhm @ 50A, 10V 5.3mOhm @ 30A, 10V 5.9mOhm @ 30A, 10V 8.8mOhm @ 30A, 10V 4.4mOhm @ 60A, 10V 3.4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 2V @ 80µA 2V @ 70µA 2V @ 50µA 2V @ 40µA 2V @ 20µA 2V @ 40µA 2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 5 V 40 nC @ 5 V 25 nC @ 5 V 22 nC @ 5 V 13 nC @ 5 V 26 nC @ 5 V 41 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5199 pF @ 15 V 5200 pF @ 15 V 3110 pF @ 15 V 2653 pF @ 15 V 1642 pF @ 15 V 3200 pF @ 15 V 5200 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 115W (Tc) 115W (Tc) 94W (Tc) 83W (Tc) 63W (Tc) 94W (Tc) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package PG-TO251-3-11 PG-TO251-3-11 PG-TO251-3-11 PG-TO251-3-11 PG-TO251-3-11 PG-TO251-3-11 PG-TO251-3-11
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak

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