IPS03N03LA G
  • Share:

Infineon Technologies IPS03N03LA G

Manufacturer No:
IPS03N03LA G
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPS03N03LA G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 90A TO251-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5200 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3-11
Package / Case:TO-251-3 Stub Leads, IPak
0 Remaining View Similar

In Stock

-
416

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPS03N03LA G IPS03N03LB G   IPS04N03LA G   IPS05N03LA G   IPS06N03LA G   IPS09N03LA G   IPS13N03LA G  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 30 V 25 V 25 V 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 90A (Tc) 50A (Tc) 50A (Tc) 50A (Tc) 50A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 60A, 10V 3.5mOhm @ 60A, 10V 4mOhm @ 50A, 10V 5.3mOhm @ 30A, 10V 5.9mOhm @ 30A, 10V 8.8mOhm @ 30A, 10V 12.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 70µA 2V @ 70µA 2V @ 80µA 2V @ 50µA 2V @ 40µA 2V @ 20µA 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 5 V 40 nC @ 5 V 41 nC @ 5 V 25 nC @ 5 V 22 nC @ 5 V 13 nC @ 5 V 8.3 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5200 pF @ 15 V 5200 pF @ 15 V 5199 pF @ 15 V 3110 pF @ 15 V 2653 pF @ 15 V 1642 pF @ 15 V 1043 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 115W (Tc) 115W (Tc) 115W (Tc) 94W (Tc) 83W (Tc) 63W (Tc) 46W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package PG-TO251-3-11 PG-TO251-3-11 PG-TO251-3-11 PG-TO251-3-11 PG-TO251-3-11 PG-TO251-3-11 PG-TO251-3-11
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak

Related Product By Categories

C3M0280090J
C3M0280090J
Wolfspeed, Inc.
SICFET N-CH 900V 11A D2PAK-7
NDS355AN
NDS355AN
onsemi
MOSFET N-CH 30V 1.7A SUPERSOT3
BSC074N15NS5ATMA1
BSC074N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 114A TSON-8-3
IRF9610SPBF
IRF9610SPBF
Vishay Siliconix
MOSFET P-CH 200V 1.8A D2PAK
PMZ200UNE315
PMZ200UNE315
NXP USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
NVTFS5C673NLWFTAG
NVTFS5C673NLWFTAG
onsemi
MOSFET N-CH 60V 13A/50A 8WDFN
HUFA75329D3ST
HUFA75329D3ST
onsemi
MOSFET N-CH 55V 20A TO252AA
SI4470EY-T1-E3
SI4470EY-T1-E3
Vishay Siliconix
MOSFET N-CH 60V 9A 8SO
PH6030AL,115
PH6030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 79A LFPAK56
RF4E080GNTR
RF4E080GNTR
Rohm Semiconductor
MOSFET N-CH 30V 8A HUML2020L8
RS1E301GNTB1
RS1E301GNTB1
Rohm Semiconductor
MOSFET N-CH 30V 30A/80A 8HSOP
R5019ANJTL
R5019ANJTL
Rohm Semiconductor
MOSFET N-CH 500V 19A LPTS

Related Product By Brand

ESD5V3U2U-03F E6327
ESD5V3U2U-03F E6327
Infineon Technologies
TVS DIODE 5.3VWM 15VC TSFP-3
DD104N08KAHPSA1
DD104N08KAHPSA1
Infineon Technologies
DIODE MODULE 1200V 160A
D1800N43TVFXPSA1
D1800N43TVFXPSA1
Infineon Technologies
DIODE GEN PURP 4.3KV 1800A
T640N14TOFXPSA1
T640N14TOFXPSA1
Infineon Technologies
SCR MODULE 1800V 1250A DO200AA
MMBTA56LT1
MMBTA56LT1
Infineon Technologies
TRANS PNP 80V 0.5A SOT23-3
AIGB40N65F5ATMA1
AIGB40N65F5ATMA1
Infineon Technologies
DISCRETE SWITCHES
IRGS14C40LTRLP
IRGS14C40LTRLP
Infineon Technologies
IGBT 430V 20A TO263AB
SAK-XE164GM-48F80L AA
SAK-XE164GM-48F80L AA
Infineon Technologies
IC MCU 16BIT 384KB FLASH 100LQFP
CY8C4126AZQ-S423
CY8C4126AZQ-S423
Infineon Technologies
IC MCU 32BIT 64KB FLASH 48TQFP
S29GL256S90DHSS13
S29GL256S90DHSS13
Infineon Technologies
IC FLASH 256MBIT PARALLEL 64FBGA
S25FS256SAGBHM203
S25FS256SAGBHM203
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 24BGA
CY7C1426KV18-300BZCT
CY7C1426KV18-300BZCT
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA