IPP90R1K2C3XKSA2
  • Share:

Infineon Technologies IPP90R1K2C3XKSA2

Manufacturer No:
IPP90R1K2C3XKSA2
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP90R1K2C3XKSA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 5.1A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id:3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.40
247

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPP90R1K2C3XKSA2 IPP90R1K2C3XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Tc) 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.8A, 10V 1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 310µA 3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V 28 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 100 V 710 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 83W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3
Package / Case TO-220-3 TO-220-3

Related Product By Categories

PMZ950UPELYL
PMZ950UPELYL
Nexperia USA Inc.
MOSFET P-CH 20V 500MA DFN1006-3
ISL9N310AD3ST_NL
ISL9N310AD3ST_NL
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
SIHB16N50C-E3
SIHB16N50C-E3
Vishay Siliconix
MOSFET N-CH 500V 16A D2PAK
STP5NK100Z
STP5NK100Z
STMicroelectronics
MOSFET N-CH 1000V 3.5A TO220AB
SIHA17N80AEF-GE3
SIHA17N80AEF-GE3
Vishay Siliconix
EF SERIES POWER MOSFET WITH FAST
IRF820LPBF
IRF820LPBF
Vishay Siliconix
MOSFET N-CH 500V 2.5A I2PAK
IPB120N08S403ATMA1
IPB120N08S403ATMA1
Infineon Technologies
MOSFET N-CH 80V 120A TO263-3
IPI600N25N3G
IPI600N25N3G
Infineon Technologies
IPI600N25 - 12V-300V N-CHANNEL P
VN10LPSTOB
VN10LPSTOB
Diodes Incorporated
MOSFET N-CH 60V 270MA E-LINE
HUFA75329P3
HUFA75329P3
onsemi
MOSFET N-CH 55V 49A TO220-3
NTD4810N-1G
NTD4810N-1G
onsemi
MOSFET N-CH 30V 9A/54A IPAK
2SK3748-1E
2SK3748-1E
onsemi
MOSFET N-CH 1500V 4A TO3PF-3

Related Product By Brand

BAS40-07WH6327
BAS40-07WH6327
Infineon Technologies
SCHOTTKY DIODE
BB 857 E7902
BB 857 E7902
Infineon Technologies
DIODE VAR CAP 30V 20MA SCD-80
BC817K-25WH6433
BC817K-25WH6433
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
IRFU3708PBF
IRFU3708PBF
Infineon Technologies
MOSFET N-CH 30V 61A IPAK
IR2127STRPBF
IR2127STRPBF
Infineon Technologies
IC GATE DRVR HI/LOW SIDE 8SOIC
TDA4862
TDA4862
Infineon Technologies
IC PFC CTRLR DCM 8DIP
IRU1205-36CLTR
IRU1205-36CLTR
Infineon Technologies
IC REG LINEAR 3.6V 300MA SOT23-5
TLE49642MXTSA1
TLE49642MXTSA1
Infineon Technologies
MAGNETIC SWITCH UNIPOLAR SOT23-3
MB90024PMT-GS-292
MB90024PMT-GS-292
Infineon Technologies
IC MCU 120LQFP
CY8C26233-24SI
CY8C26233-24SI
Infineon Technologies
IC MCU 8BIT 8KB FLASH 20SOIC
S25FL512SDSMFB013
S25FL512SDSMFB013
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 16SOIC
CY7C109B-15ZXC
CY7C109B-15ZXC
Infineon Technologies
IC SRAM 1MBIT PARALLEL 32TSOP I