IPP80R900P7XKSA1
  • Share:

Infineon Technologies IPP80R900P7XKSA1

Manufacturer No:
IPP80R900P7XKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPP80R900P7XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 6A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 500 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.91
68

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPP80R900P7XKSA1 IPP80R600P7XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.2A, 10V 600mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 110µA 3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 500 V 570 pF @ 500 V
FET Feature - -
Power Dissipation (Max) 45W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3

Related Product By Categories

FDS6612A
FDS6612A
onsemi
MOSFET N-CH 30V 8.4A 8SOIC
TK28A65W,S5X
TK28A65W,S5X
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 27.6A TO220SIS
STP45NF06
STP45NF06
STMicroelectronics
MOSFET N-CH 60V 38A TO220AB
SI4442DY-T1-E3
SI4442DY-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 15A 8SO
MMSF3P02HDR2G
MMSF3P02HDR2G
onsemi
MOSFET P-CH 20V 5.6A 8SOIC
FCMT250N65S3
FCMT250N65S3
onsemi
MOSFET N-CH 650V 12A POWER88
STW74NF30
STW74NF30
STMicroelectronics
MOSFET N-CH 300V 60A TO247
IRL3803STRR
IRL3803STRR
Infineon Technologies
MOSFET N-CH 30V 140A D2PAK
DMP2225L-7
DMP2225L-7
Diodes Incorporated
MOSFET P-CH 20V 2.6A SOT23-3
NTTFS4943NTWG
NTTFS4943NTWG
onsemi
MOSFET N-CH 30V 8A/41A 8WDFN
NVMFS5C410NT1G
NVMFS5C410NT1G
onsemi
MOSFET N-CH 40V 5DFN
STI100N10F7
STI100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A I2PAK

Related Product By Brand

PTFA240451E V1
PTFA240451E V1
Infineon Technologies
IC FET RF LDMOS 45W H-30265-2
IRF6613TR1PBF
IRF6613TR1PBF
Infineon Technologies
MOSFET N-CH 40V 23A DIRECTFET
IPD230N06NGBTMA1
IPD230N06NGBTMA1
Infineon Technologies
MOSFET N-CH 60V 30A TO252-3
IRFSL33N15DTRRP
IRFSL33N15DTRRP
Infineon Technologies
MOSFET N-CH 150V 33A TO262
IPI90R340C3XKSA1
IPI90R340C3XKSA1
Infineon Technologies
MOSFET N-CH 900V 15A TO262-3
IKA08N65H5XKSA1
IKA08N65H5XKSA1
Infineon Technologies
IGBT 650V 10.8A TO220-3
IRS2607DSTRPBF
IRS2607DSTRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
CYBLE-013025-EVAL
CYBLE-013025-EVAL
Infineon Technologies
EVAL BLUETOOTH WICED MODULE
CY8C24894-24LFXI
CY8C24894-24LFXI
Infineon Technologies
IC MCU 8BIT 16KB FLASH 56QFN
CY7C1061G-10ZSXI
CY7C1061G-10ZSXI
Infineon Technologies
IC SRAM 16MBIT PAR 54TSOP II
CY7C038V-15AC
CY7C038V-15AC
Infineon Technologies
IC SRAM 1.152MBIT PAR 100TQFP
CY62138FV30LL-45ZAXA
CY62138FV30LL-45ZAXA
Infineon Technologies
IC SRAM 2MBIT PARALLEL 32STSOP