IPP80R600P7XKSA1
  • Share:

Infineon Technologies IPP80R600P7XKSA1

Manufacturer No:
IPP80R600P7XKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPP80R600P7XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 8A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 500 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.42
238

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPP80R600P7XKSA1 IPP80R900P7XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3.4A, 10V 900mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170µA 3.5V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 500 V 350 pF @ 500 V
FET Feature - -
Power Dissipation (Max) 60W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3

Related Product By Categories

IRFZ34PBF
IRFZ34PBF
Vishay Siliconix
MOSFET N-CH 60V 30A TO220AB
UPA2790GR-E1-A
UPA2790GR-E1-A
Renesas Electronics America Inc
P-CHANNEL POWER MOSFET
BUK7237-55A,118
BUK7237-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 32.3A DPAK
IRF720PBF
IRF720PBF
Vishay Siliconix
MOSFET N-CH 400V 3.3A TO220AB
SIR450DP-T1-RE3
SIR450DP-T1-RE3
Vishay Siliconix
N-CHANNEL 45 V (D-S) MOSFET POWE
TP89R103NL,LQ
TP89R103NL,LQ
Toshiba Semiconductor and Storage
MOSFET N CH 30V 15A 8SOP
IPP048N04NGXKSA1
IPP048N04NGXKSA1
Infineon Technologies
MOSFET N-CH 40V 70A TO220-3
STW20NM50
STW20NM50
STMicroelectronics
MOSFET N-CH 550V 20A TO247-3
SUM52N20-39P-E3
SUM52N20-39P-E3
Vishay Siliconix
MOSFET N-CH 200V 52A TO263
IXFV15N100P
IXFV15N100P
IXYS
MOSFET N-CH 1000V 15A PLUS220
IPA60R520E6XKSA1
IPA60R520E6XKSA1
Infineon Technologies
MOSFET N-CH 600V 8.1A TO220-FP
RDD023N50TL
RDD023N50TL
Rohm Semiconductor
MOSFET N-CH 500V 2A CPT3

Related Product By Brand

EVALDRIVE3PHPFD7TOBO1
EVALDRIVE3PHPFD7TOBO1
Infineon Technologies
EVAL_DRIVE_3PH_PFD7
BCR 191T E6327
BCR 191T E6327
Infineon Technologies
TRANS PREBIAS PNP 250MW SC75
SPP15P10PLGHKSA1
SPP15P10PLGHKSA1
Infineon Technologies
MOSFET P-CH 100V 15A TO220-3
C167CSLMCABXQLA2
C167CSLMCABXQLA2
Infineon Technologies
IC MCU 16BIT ROMLESS 144MQFP
IR2170S
IR2170S
Infineon Technologies
IC CURRENT SENSE 600V 1MA 8-SOIC
IR1175S
IR1175S
Infineon Technologies
IC GATE DRVR LOW-SIDE 20SSOP
CY39030V208-233NTXC
CY39030V208-233NTXC
Infineon Technologies
IC CPLD 512MC 7.2NS 208BQFP
MB96F6A6RBPMC-GSE1
MB96F6A6RBPMC-GSE1
Infineon Technologies
IC MCU 16BIT 288KB FLASH 120LQFP
CY9AFA31MPMC-G-SNE2
CY9AFA31MPMC-G-SNE2
Infineon Technologies
IC MCU 32BIT 64KB FLASH 80LQFP
CY621472GN30-45ZSXIT
CY621472GN30-45ZSXIT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44TSOP II
S25FL512SAGMFMR13
S25FL512SAGMFMR13
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 16SOIC
CY14B104L-BA25XCT
CY14B104L-BA25XCT
Infineon Technologies
IC NVSRAM 4MBIT PARALLEL 48FBGA