IPP80R1K4P7XKSA1
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Infineon Technologies IPP80R1K4P7XKSA1

Manufacturer No:
IPP80R1K4P7XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP80R1K4P7XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 4A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id:3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 500 V
FET Feature:Super Junction
Power Dissipation (Max):32W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number IPP80R1K4P7XKSA1 IPP80R1K2P7XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.4A, 10V 1.2Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id 3.5V @ 70µA 3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 11 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 500 V 300 pF @ 500 V
FET Feature Super Junction -
Power Dissipation (Max) 32W (Tc) 37W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3

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