IPP80P04P4L06AKSA1
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Infineon Technologies IPP80P04P4L06AKSA1

Manufacturer No:
IPP80P04P4L06AKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPP80P04P4L06AKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 40V 80A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:104 nC @ 10 V
Vgs (Max):+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds:6580 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):88W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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Similar Products

Part Number IPP80P04P4L06AKSA1 IPP80P04P4L08AKSA1   IPP80P04P4L04AKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.7mOhm @ 80A, 10V 8.2mOhm @ 80A, 10V 4.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 150µA 2.2V @ 120µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V 92 nC @ 10 V 176 nC @ 10 V
Vgs (Max) +5V, -16V +5V, -16V +5V, -16V
Input Capacitance (Ciss) (Max) @ Vds 6580 pF @ 25 V 5430 pF @ 25 V 3800 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 88W (Tc) 75W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3 TO-220-3

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