IPP80P03P4L04AKSA2
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Infineon Technologies IPP80P03P4L04AKSA2

Manufacturer No:
IPP80P03P4L04AKSA2
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP80P03P4L04AKSA2 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 80A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:4.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2V @ 253µA
Gate Charge (Qg) (Max) @ Vgs:160 nC @ 10 V
Vgs (Max):+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds:11300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):137W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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Similar Products

Part Number IPP80P03P4L04AKSA2 IPP80P03P4L04AKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 80A, 10V 4.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 253µA 2V @ 253µA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V 160 nC @ 10 V
Vgs (Max) +5V, -16V +5V, -16V
Input Capacitance (Ciss) (Max) @ Vds 11300 pF @ 25 V 11300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 137W (Tc) 137W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3

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