IPP80N06S407AKSA2
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Infineon Technologies IPP80N06S407AKSA2

Manufacturer No:
IPP80N06S407AKSA2
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPP80N06S407AKSA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 80A TO220-3
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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Similar Products

Part Number IPP80N06S407AKSA2 IPP80N06S4L07AKSA2   IPP80N06S405AKSA2   IPP80N06S407AKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Obsolete Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel - N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V - 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc) - 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V - 10V
Rds On (Max) @ Id, Vgs 7.4mOhm @ 80A, 10V 6.7mOhm @ 80A, 10V - 7.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 40µA 2.2V @ 40µA - 4V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 75 nC @ 10 V - 56 nC @ 10 V
Vgs (Max) ±20V ±16V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V 5680 pF @ 25 V - 4500 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 79W (Tc) 79W (Tc) - 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole - Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1 - PG-TO220-3-1
Package / Case TO-220-3 TO-220-3 - TO-220-3

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