IPP80N06S205AKSA1
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Infineon Technologies IPP80N06S205AKSA1

Manufacturer No:
IPP80N06S205AKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP80N06S205AKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 80A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5110 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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Similar Products

Part Number IPP80N06S205AKSA1 IPP80N06S207AKSA1   IPP80N06S208AKSA1   IPP80N06S209AKSA1   IPP80N06S2H5AKSA1   IPP80N06S2L05AKSA1   IPP80N06S405AKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V 55 V 55 V 55 V 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 80A, 10V 6.6mOhm @ 68A, 10V 8mOhm @ 58A, 10V 9.1mOhm @ 50A, 10V 5.5mOhm @ 80A, 10V 4.8mOhm @ 80A, 10V 5.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 180µA 4V @ 150µA 4V @ 125µA 4V @ 230µA 2V @ 250µA 4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 110 nC @ 10 V 96 nC @ 10 V 80 nC @ 10 V 155 nC @ 10 V 230 nC @ 10 V 81 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5110 pF @ 25 V 3400 pF @ 25 V 2860 pF @ 25 V 2360 pF @ 25 V 4400 pF @ 25 V 5700 pF @ 25 V 6500 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 300W (Tc) 250W (Tc) 215W (Tc) 190W (Tc) 300W (Tc) 300W (Tc) 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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