IPP80N04S304AKSA1
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Infineon Technologies IPP80N04S304AKSA1

Manufacturer No:
IPP80N04S304AKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPP80N04S304AKSA1 Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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Similar Products

Part Number IPP80N04S304AKSA1 IPP80N04S404AKSA1   IPP80N04S306AKSA1   IPP80N04S3H4AKSA1   IPP80N04S204AKSA1   IPP80N04S303AKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 80A, 10V 4.6mOhm @ 80A, 10V 5.7mOhm @ 80A, 10V 4.8mOhm @ 80A, 10V 3.7mOhm @ 80A, 10V 3.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA 4V @ 35µA 4V @ 52µA 4V @ 65µA 4V @ 250µA 4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 43 nC @ 10 V 47 nC @ 10 V 60 nC @ 10 V 170 nC @ 10 V 110 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5200 pF @ 25 V 3440 pF @ 25 V 3250 pF @ 25 V 3900 pF @ 25 V 5300 pF @ 25 V 7300 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 136W (Tc) 71W (Tc) 100W (Tc) 115W (Tc) 300W (Tc) 188W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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