IPP65R380C6
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Infineon Technologies IPP65R380C6

Manufacturer No:
IPP65R380C6
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPP65R380C6 Datasheet
ECAD Model:
-
Description:
POWER FIELD-EFFECT TRANSISTOR, 1
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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Similar Products

Part Number IPP65R380C6 IPP60R380C6  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 650 V -
Current - Continuous Drain (Id) @ 25°C 10.6A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 380mOhm @ 3.2A, 10V -
Vgs(th) (Max) @ Id 3.5V @ 320µA -
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 100 V -
FET Feature - -
Power Dissipation (Max) 83W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package PG-TO220-3-1 -
Package / Case TO-220-3 -

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