IPP65R310CFDXKSA2
  • Share:

Infineon Technologies IPP65R310CFDXKSA2

Manufacturer No:
IPP65R310CFDXKSA2
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP65R310CFDXKSA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 11.4A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:310mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):104.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.00
291

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPP65R310CFDXKSA2 IPP65R110CFDXKSA2   IPP65R310CFDXKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Not For New Designs
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 11.4A (Tc) 31.2A (Tc) 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 310mOhm @ 4.4A, 10V 110mOhm @ 12.7A, 10V 310mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 400µA 4.5V @ 1.3mA 4.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V 118 nC @ 10 V 41 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V 3240 pF @ 100 V 1100 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 104.2W (Tc) 277.8W (Tc) 104.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BUK9219-55A,118
BUK9219-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 55A DPAK
PJA3403_R1_00001
PJA3403_R1_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
STD7N80K5
STD7N80K5
STMicroelectronics
MOSFET N-CH 800V 6A DPAK
IAUC120N04S6L012ATMA1
IAUC120N04S6L012ATMA1
Infineon Technologies
IAUC120N04S6L012ATMA1
SQS482EN-T1_GE3
SQS482EN-T1_GE3
Vishay Siliconix
MOSFET N-CH 30V 16A PPAK1212-8
IXTP230N04T4
IXTP230N04T4
IXYS
MOSFET N-CH 40V 230A TO220AB
IRF6898MTRPBF
IRF6898MTRPBF
Infineon Technologies
IRF6898 - 12V-300V N-CHANNEL POW
SPB100N06S2L-05
SPB100N06S2L-05
Infineon Technologies
MOSFET N-CH 55V 100A TO263-3
IXTQ240N055T
IXTQ240N055T
IXYS
MOSFET N-CH 55V 240A TO3P
STD25P03LT4G
STD25P03LT4G
onsemi
MOSFET P-CH 30V 25A DPAK
MCH3478-S-TL-H
MCH3478-S-TL-H
onsemi
MOSFET N-CH 2A 30V MCPH3
MCH6337-TL-W
MCH6337-TL-W
onsemi
MOSFET P-CH 20V 4.5A 6MCPH

Related Product By Brand

ESD240B1W01005E6327XTSA1
ESD240B1W01005E6327XTSA1
Infineon Technologies
TVS DIODE 22VWM 27VC WLL-2-2
EVALM13645ATOBO1
EVALM13645ATOBO1
Infineon Technologies
EVAL CIPOS IRSM836-045A
BB837E6327HTSA1
BB837E6327HTSA1
Infineon Technologies
DIODE VAR CAP 30V 20MA SOD-323
BC860BWE6327HTSA1
BC860BWE6327HTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT-323
CYPD5236-96BZXI
CYPD5236-96BZXI
Infineon Technologies
IC USB TYPE C CCG5 96BGA
MB90352ASPMC-GS-112
MB90352ASPMC-GS-112
Infineon Technologies
IC MCU 16BIT 128KB MROM 64LQFP
MB90347ASPQC-GS-104-ERE2
MB90347ASPQC-GS-104-ERE2
Infineon Technologies
IC MCU 16BIT 128KB MROM 100PQFP
S29GL128S10DHV010
S29GL128S10DHV010
Infineon Technologies
IC FLASH 128MBIT PARALLEL 64FBGA
S29GL512S11GHI023
S29GL512S11GHI023
Infineon Technologies
IC FLASH 512MBIT PARALLEL 56FBGA
CY14B108L-ZS25XIT
CY14B108L-ZS25XIT
Infineon Technologies
IC NVSRAM 8MBIT PAR 44TSOP II
CY7C199CN-15PXC
CY7C199CN-15PXC
Infineon Technologies
IC SRAM 256KBIT PARALLEL 28DIP
CYPD4125-40LQXI
CYPD4125-40LQXI
Infineon Technologies
IC MCD CCG4 WIRED 40-QFN