IPP65R190E6XKSA1
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Infineon Technologies IPP65R190E6XKSA1

Manufacturer No:
IPP65R190E6XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP65R190E6XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 20.2A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1620 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):151W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number IPP65R190E6XKSA1 IPP60R190E6XKSA1   IPP65R190C6XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc) 20.2A (Tc) 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V 190mOhm @ 9.5A, 10V 190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 730µA 3.5V @ 630µA 3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V 63 nC @ 10 V 73 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1620 pF @ 100 V 1400 pF @ 100 V 1620 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 151W (Tc) 151W (Tc) 151W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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