IPP65R150CFDAAKSA1
  • Share:

Infineon Technologies IPP65R150CFDAAKSA1

Manufacturer No:
IPP65R150CFDAAKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPP65R150CFDAAKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 22.4A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:22.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2340 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):195.3W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$7.16
93

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPP65R150CFDAAKSA1 IPP65R190CFDAAKSA1   IPP65R110CFDAAKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 22.4A (Tc) 17.5A (Tc) 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 9.3A, 10V 190mOhm @ 7.3A, 10V 110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 900µA 4.5V @ 700µA 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V 68 nC @ 10 V 118 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2340 pF @ 100 V 1850 pF @ 100 V 3240 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 195.3W (Tc) 151W (Tc) 277.8W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

SSM3J46CTB(TPL3)
SSM3J46CTB(TPL3)
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 2A CST3B
BUK9Y21-40E,115
BUK9Y21-40E,115
Nexperia USA Inc.
MOSFET N-CH 40V 33A LFPAK56
PJQ4441P_R2_00001
PJQ4441P_R2_00001
Panjit International Inc.
40V P-CHANNEL ENHANCEMENT MODE M
FDS3580
FDS3580
onsemi
MOSFET N-CH 80V 7.6A 8SOIC
HUFA75344P3_NL
HUFA75344P3_NL
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
STD9N80K5
STD9N80K5
STMicroelectronics
MOSFET N-CHANNEL 800V 7A DPAK
IPW65R420CFDFKSA2
IPW65R420CFDFKSA2
Infineon Technologies
MOSFET N-CH 650V 8.7A TO247-3
IXFH50N60X
IXFH50N60X
IXYS
MOSFET N-CH 600V 50A TO247
IRF9Z20
IRF9Z20
Vishay Siliconix
MOSFET P-CH 50V 9.7A TO220AB
IXFK120N25
IXFK120N25
IXYS
MOSFET N-CH 250V 120A TO264AA
NVMFS5C404NWFT3G-K
NVMFS5C404NWFT3G-K
onsemi
MOSFET N-CH 40V 53A/378A 5DFN
RMW150N03TB
RMW150N03TB
Rohm Semiconductor
MOSFET N-CH 30V 15A 8PSOP

Related Product By Brand

KIT6W12VICE5TOBO1
KIT6W12VICE5TOBO1
Infineon Technologies
EVAL BOARD FOR ICE5QSAG
EVAL6EDL04I06PTTOBO1
EVAL6EDL04I06PTTOBO1
Infineon Technologies
EVAL BOARD
BBY5103WE6327HTSA1
BBY5103WE6327HTSA1
Infineon Technologies
DIODE TUNING 7V 20MA SOD-323
IPA60R380C6XKSA1
IPA60R380C6XKSA1
Infineon Technologies
MOSFET N-CH 600V 10.6A TO220-FP
IRFH8325TRPBF
IRFH8325TRPBF
Infineon Technologies
MOSFET N-CH 30V 21A/82A PQFN
IRFR5410TRRPBF
IRFR5410TRRPBF
Infineon Technologies
MOSFET P-CH 100V 13A DPAK
C164CM4EFABFXUMA1
C164CM4EFABFXUMA1
Infineon Technologies
IC MCU 16BIT 32KB OTP 64TQFP
C167CSLMCABXQLA2
C167CSLMCABXQLA2
Infineon Technologies
IC MCU 16BIT ROMLESS 144MQFP
CY37064P100-125AXIT
CY37064P100-125AXIT
Infineon Technologies
IC CPLD 64MC 10NS 100LQFP
MB90F457PMCR-G
MB90F457PMCR-G
Infineon Technologies
IC MCU 16BIT 64KB FLASH 48LQFP
MB90F022CPF-GS-9109
MB90F022CPF-GS-9109
Infineon Technologies
IC MCU MICOM FLASH 100QFP
MB90922NCSPMC-GS-161E1
MB90922NCSPMC-GS-161E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 120LQFP