IPP65R110CFD7XKSA1
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Infineon Technologies IPP65R110CFD7XKSA1

Manufacturer No:
IPP65R110CFD7XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP65R110CFD7XKSA1 Datasheet
ECAD Model:
-
Description:
HIGH POWER_NEW
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id:4.5V @ 480µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1942 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):114W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number IPP65R110CFD7XKSA1 IPP65R110CFDXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 700 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 9.7A, 10V 110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 480µA 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V 118 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1942 pF @ 400 V 3240 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 114W (Tc) 277.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3

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