IPP65R110CFD7XKSA1
  • Share:

Infineon Technologies IPP65R110CFD7XKSA1

Manufacturer No:
IPP65R110CFD7XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP65R110CFD7XKSA1 Datasheet
ECAD Model:
-
Description:
HIGH POWER_NEW
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id:4.5V @ 480µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1942 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):114W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$6.43
56

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPP65R110CFD7XKSA1 IPP65R110CFDXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 700 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 9.7A, 10V 110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 480µA 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V 118 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1942 pF @ 400 V 3240 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 114W (Tc) 277.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3

Related Product By Categories

PJQ4402P_R2_00001
PJQ4402P_R2_00001
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
BSC190N15NS3GATMA1
BSC190N15NS3GATMA1
Infineon Technologies
MOSFET N-CH 150V 50A TDSON-8-1
PMV48XP,215
PMV48XP,215
Nexperia USA Inc.
MOSFET P-CH 20V 3.5A TO236AB
SISH410DN-T1-GE3
SISH410DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 22A/35A PPAK
SQM120N06-3M5L_GE3
SQM120N06-3M5L_GE3
Vishay Siliconix
MOSFET N-CH 60V 120A TO263
IPD60R520CP
IPD60R520CP
Infineon Technologies
N-CHANNEL POWER MOSFET
SI7374DP-T1-E3
SI7374DP-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 24A PPAK SO-8
HUF75842S3S
HUF75842S3S
onsemi
MOSFET N-CH 150V 43A D2PAK
IPP65R380C6XKSA1
IPP65R380C6XKSA1
Infineon Technologies
MOSFET N-CH 650V 10.6A TO220-3
SIR482DP-T1-GE3
SIR482DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 35A PPAK SO-8
SCT3060AW7TL
SCT3060AW7TL
Rohm Semiconductor
SICFET N-CH 650V 38A TO263-7
RE1C002ZPMGTL
RE1C002ZPMGTL
Rohm Semiconductor
MOSFET P-CH 20V 200MA EMT3F

Related Product By Brand

SPP80N06S-08
SPP80N06S-08
Infineon Technologies
N-CHANNEL POWER MOSFET
IPB80N04S404ATMA1
IPB80N04S404ATMA1
Infineon Technologies
MOSFET N-CH 40V 80A TO263-3-2
IPB065N10N3GATMA1
IPB065N10N3GATMA1
Infineon Technologies
MOSFET N-CH 100V 80A D2PAK
SGB02N60ATMA1
SGB02N60ATMA1
Infineon Technologies
IGBT 600V 6A 30W TO263-3
IR3565AMWS01TRP
IR3565AMWS01TRP
Infineon Technologies
IC REG BUCK 48VQFN
TLE4998P4HALA1
TLE4998P4HALA1
Infineon Technologies
SENSOR HALL EFFECT PWM SSO4
CY8C20466A-24LQXIT
CY8C20466A-24LQXIT
Infineon Technologies
IC MCU PSOC 32K FLASH 2K 32QFN
MB90F594GPF-GE1
MB90F594GPF-GE1
Infineon Technologies
IC MCU 16BIT 256KB FLASH 100QFP
CY90F867APMC-GE1
CY90F867APMC-GE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100LQFP
MB90678PF-G-225-BND-B
MB90678PF-G-225-BND-B
Infineon Technologies
IC MCU 16BIT 64KB MROM 80PQFP
CY62126EV30LL-55BVXET
CY62126EV30LL-55BVXET
Infineon Technologies
IC SRAM 1MBIT PARALLEL 48VFBGA
S99GL512P12FFIV10
S99GL512P12FFIV10
Infineon Technologies
IC FLASH 512MBIT PARALLEL 64FBGA