IPP60R750E6XKSA1
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Infineon Technologies IPP60R750E6XKSA1

Manufacturer No:
IPP60R750E6XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP60R750E6XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 5.7A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs:17.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:373 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number IPP60R750E6XKSA1 IPP60R450E6XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc) 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 2A, 10V 450mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170µA 3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 17.2 nC @ 10 V 28 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 373 pF @ 100 V 620 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 48W (Tc) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3

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