IPP60R600P7XKSA1
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Infineon Technologies IPP60R600P7XKSA1

Manufacturer No:
IPP60R600P7XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP60R600P7XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 6A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id:4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:363 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number IPP60R600P7XKSA1 IPP60R600P6XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 1.7A, 10V 600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 80µA 4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 363 pF @ 400 V 557 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 30W (Tc) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3

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