IPP60R600C6
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Infineon Technologies IPP60R600C6

Manufacturer No:
IPP60R600C6
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPP60R600C6 Datasheet
ECAD Model:
-
Description:
7.3A, 600V, 0.6OHM, N-CHANNEL MO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:20.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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In Stock

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Similar Products

Part Number IPP60R600C6 IPP65R600C6   IPP60R600CP   IPP60R600E6  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
FET Type N-Channel N-Channel - -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) - -
Drain to Source Voltage (Vdss) 600 V 650 V - -
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc) 7.3A (Tc) - -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V - -
Rds On (Max) @ Id, Vgs 600mOhm @ 2.4A, 10V 600mOhm @ 2.1A, 10V - -
Vgs(th) (Max) @ Id 3.5V @ 200µA 3.5V @ 210µA - -
Gate Charge (Qg) (Max) @ Vgs 20.5 nC @ 10 V 23 nC @ 10 V - -
Vgs (Max) ±20V ±20V - -
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V 440 pF @ 100 V - -
FET Feature - - - -
Power Dissipation (Max) 63W (Tc) 63W (Tc) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -
Mounting Type Through Hole Through Hole - -
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1 - -
Package / Case TO-220-3 TO-220-3 - -

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