IPP60R520CP
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Infineon Technologies IPP60R520CP

Manufacturer No:
IPP60R520CP
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPP60R520CP Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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$0.72
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Similar Products

Part Number IPP60R520CP IPP50R520CP   IPP60R520C6  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type - N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 500 V 600 V
Current - Continuous Drain (Id) @ 25°C - 7.1A (Tc) 8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V
Rds On (Max) @ Id, Vgs - 520mOhm @ 3.8A, 10V 520mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id - 3.5V @ 250µA 3.5V @ 230µA
Gate Charge (Qg) (Max) @ Vgs - 17 nC @ 10 V 23.4 nC @ 10 V
Vgs (Max) - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 680 pF @ 100 V 512 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) - 66W (Tc) 29W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type - Through Hole Through Hole
Supplier Device Package - PG-TO220-3-1 PG-TO220-3-1
Package / Case - TO-220-3 TO-220-3

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