IPP60R380C6XKSA1
  • Share:

Infineon Technologies IPP60R380C6XKSA1

Manufacturer No:
IPP60R380C6XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP60R380C6XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 10.6A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.65
188

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPP60R380C6XKSA1 IPP60R380E6XKSA1   IPP65R380C6XKSA1   IPP60R380P6XKSA1   IPP60R280C6XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Not For New Designs Obsolete Obsolete Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 650 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 10.6A (Tc) 10.6A (Tc) 10.6A (Tc) 10.6A (Tc) 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V 380mOhm @ 3.8A, 10V 380mOhm @ 3.2A, 10V 380mOhm @ 3.8A, 10V 280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 320µA 3.5V @ 320µA 3.5V @ 320µA 4.5V @ 320µA 3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 32 nC @ 10 V 39 nC @ 10 V 19 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 100 V 700 pF @ 100 V 710 pF @ 100 V 877 pF @ 100 V 950 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 83W (Tc) 83W (Tc) 83W (Tc) 83W (Tc) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3 PG-TO220-3 PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

DMP6185SE-13
DMP6185SE-13
Diodes Incorporated
MOSFET P-CH 60V 3A SOT223
SPD50N03S2L
SPD50N03S2L
Infineon Technologies
N-CHANNEL POWER MOSFET
AON2403
AON2403
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 12V 8A 6DFN
CSD23382F4
CSD23382F4
Texas Instruments
MOSFET P-CH 12V 3.5A 3PICOSTAR
FDMC8321LDC
FDMC8321LDC
onsemi
MOSFET N-CH 40V 27A DLCOOL33
NVMFS5C670NLWFAFT3G
NVMFS5C670NLWFAFT3G
onsemi
MOSFET N-CH 60V 17A/71A 5DFN
IRF9Z34NSTRRPBF
IRF9Z34NSTRRPBF
Infineon Technologies
MOSFET P-CH 55V 19A D2PAK
IXTY10P15T
IXTY10P15T
IXYS
MOSFET P-CH 150V 10A TO252
SFT1431-TL-W
SFT1431-TL-W
onsemi
MOSFET N-CH 35V 11A DPAK/TP-FA
MCB150N06YB-TP
MCB150N06YB-TP
Micro Commercial Co
MOSFET N-CH 60V 150A D2PAK
QS6U24TR
QS6U24TR
Rohm Semiconductor
MOSFET P-CH 30V 1A TSMT6
RSS090N03FU6TB
RSS090N03FU6TB
Rohm Semiconductor
MOSFET N-CH 30V 9A 8SOP

Related Product By Brand

BAT54-02LRHE6327
BAT54-02LRHE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
IAUC60N04S6L045HATMA1
IAUC60N04S6L045HATMA1
Infineon Technologies
IAUC60N04S6L045HATMA1
IPS80R1K4P7AKMA1
IPS80R1K4P7AKMA1
Infineon Technologies
MOSFET N-CH 800V 4A TO251-3
IRF6678TR1
IRF6678TR1
Infineon Technologies
MOSFET N-CH 30V 30A DIRECTFET
FF600R12ME4CBOSA1
FF600R12ME4CBOSA1
Infineon Technologies
IGBT MOD 1200V 1060A 4050W
IRGS4B60KD1TRLP
IRGS4B60KD1TRLP
Infineon Technologies
IGBT 600V 11A 63W D2PAK
TLE4927C
TLE4927C
Infineon Technologies
MAGNETIC SWITCH SPEC PURP SSO-3
S6E2C1AH0AGV2000A
S6E2C1AH0AGV2000A
Infineon Technologies
IC MCU 32BIT 2MB FLASH 144LQFP
MB89637RPFR-G-1370-BNDE1
MB89637RPFR-G-1370-BNDE1
Infineon Technologies
IC MCU 8BIT 32KB MROM 64QFP
S25FL127SABMFB101
S25FL127SABMFB101
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 8SOIC
S25FS256SAGMFV003
S25FS256SAGMFV003
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 16SOIC
S29GL512T10TFI033
S29GL512T10TFI033
Infineon Technologies
IC FLASH 512MBIT PARALLEL 56TSOP