IPP60R360P7XKSA1
  • Share:

Infineon Technologies IPP60R360P7XKSA1

Manufacturer No:
IPP60R360P7XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP60R360P7XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 9A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id:4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:555 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):41W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.39
93

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPP60R360P7XKSA1 IPP60R060P7XKSA1   IPP60R160P7XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 48A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 2.7A, 10V 60mOhm @ 15.9A, 10V 160mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id 4V @ 140µA 4V @ 800µA 4V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 67 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 555 pF @ 400 V 2895 pF @ 400 V 1317 pF @ 400 V
FET Feature - - -
Power Dissipation (Max) 41W (Tc) 164W (Tc) 81W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

TP65H070LDG-TR
TP65H070LDG-TR
Transphorm
650 V 25 A GAN FET
ZXMP6A17KTC
ZXMP6A17KTC
Diodes Incorporated
MOSFET P-CH 60V 4.4A TO252-3
BSC100N03MSGATMA1
BSC100N03MSGATMA1
Infineon Technologies
MOSFET N-CH 30V 12A/44A TDSON
MSC080SMA120J
MSC080SMA120J
Microchip Technology
SICFET N-CH 1.2KV 35A SOT227
NVTFS5C478NLWFTAG
NVTFS5C478NLWFTAG
onsemi
MOSFET N-CHANNEL 40V 26A 8WDFN
IPB048N15N5LFATMA1
IPB048N15N5LFATMA1
Infineon Technologies
MOSFET N-CH 150V 120A D2PAK
SI2304BDS-T1-BE3
SI2304BDS-T1-BE3
Vishay Siliconix
N-CHANNEL 30-V (D-S) MOSFET
RM80N20DN
RM80N20DN
Rectron USA
MOSFET N-CHANNEL 20V 80A 8PPAK
NTMTS0D7N06CLTXG
NTMTS0D7N06CLTXG
onsemi
MOSFET N-CH 60V 62.2A/477A 8DFNW
MMBF170Q-7-F
MMBF170Q-7-F
Diodes Incorporated
MOSFET N-CH 60V 500MA SOT23-3
BSO4420
BSO4420
Infineon Technologies
MOSFET N-CH 30V 13A 8SO
SCT4026DRHRC15
SCT4026DRHRC15
Rohm Semiconductor
750V, 56A, 4-PIN THD, TRENCH-STR

Related Product By Brand

EVALC101TIM231TOBO1
EVALC101TIM231TOBO1
Infineon Technologies
EVAL IM231-L6S1B IMC101T-T038
BCR158WH6327XTSA1
BCR158WH6327XTSA1
Infineon Technologies
TRANS PREBIAS PNP 250MW SOT323-3
IPB180N04S302ATMA1
IPB180N04S302ATMA1
Infineon Technologies
MOSFET N-CH 40V 180A TO263-7
BSS192PH6327XTSA1
BSS192PH6327XTSA1
Infineon Technologies
MOSFET P-CH 250V 190MA SOT89
SIGC158T120R3LEX1SA2
SIGC158T120R3LEX1SA2
Infineon Technologies
IGBT 1200V 150A DIE
TLE6281G
TLE6281G
Infineon Technologies
HALF-BRIDGE PERIPHERAL DRIVER
CY8C4246AZI-L423
CY8C4246AZI-L423
Infineon Technologies
IC MCU 32BIT 64KB FLASH 48TQFP
MB90347ESPMC-GS-493E1
MB90347ESPMC-GS-493E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
CY90387SPMT-GS-387E1
CY90387SPMT-GS-387E1
Infineon Technologies
IC MCU 16BIT 64KB MROM 48LQFP
CY9BF116NBGL-GE1
CY9BF116NBGL-GE1
Infineon Technologies
IC MCU 32BIT 544KB FLSH 112PFBGA
S26KL512SDABHI030
S26KL512SDABHI030
Infineon Technologies
IC FLASH 512MBIT PARALLEL 24FBGA
CYW20713A1KUBXGT
CYW20713A1KUBXGT
Infineon Technologies
IC RF TXRX+MCU BLUETOOTH 42UFBGA