IPP60R250CPXKSA1
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Infineon Technologies IPP60R250CPXKSA1

Manufacturer No:
IPP60R250CPXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP60R250CPXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 12A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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$2.76
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Similar Products

Part Number IPP60R250CPXKSA1 IPP50R250CPXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Not For New Designs
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 650 V -
Current - Continuous Drain (Id) @ 25°C 12A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 250mOhm @ 7.8A, 10V -
Vgs(th) (Max) @ Id 3.5V @ 440µA -
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 100 V -
FET Feature - -
Power Dissipation (Max) 104W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package PG-TO220-3 -
Package / Case TO-220-3 -

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