Infineon Technologies-IPP60R1K4C6XKSA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.4Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:	1.1 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	200 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	28.4W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO220-3
Package / Case:	TO-220-3

Infineon Technologies IPP60R1K4C6XKSA1