Infineon Technologies-IPP50R500CEXKSA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500 V
Current - Continuous Drain (Id) @ 25°C:	7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	13V
Rds On (Max) @ Id, Vgs:	500mOhm @ 2.3A, 13V
Vgs(th) (Max) @ Id:	3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:	18.7 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	433 pF @ 100 V
FET Feature:	Super Junction
Power Dissipation (Max):	-
Operating Temperature:	-
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO220-3-1
Package / Case:	TO-220-3

Infineon Technologies IPP50R500CEXKSA1