IPP50R350CPXKSA1
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Infineon Technologies IPP50R350CPXKSA1

Manufacturer No:
IPP50R350CPXKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPP50R350CPXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 550V 10A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):550 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:350mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:3.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1020 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):89W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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In Stock

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Similar Products

Part Number IPP50R350CPXKSA1 IPP50R250CPXKSA1   IPP50R350CPHKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Not For New Designs Obsolete
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 550 V - 500 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) - 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 5.6A, 10V - 350mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 370µA - 3.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V - 25 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 100 V - 1020 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 89W (Tc) - 89W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Through Hole - Through Hole
Supplier Device Package PG-TO220-3-1 - PG-TO220-3-1
Package / Case TO-220-3 - TO-220-3

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