IPP26CNE8N G
  • Share:

Infineon Technologies IPP26CNE8N G

Manufacturer No:
IPP26CNE8N G
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP26CNE8N G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 85V 35A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):85 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:26mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2070 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
48

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPP26CNE8N G IPP16CNE8N G  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V 85 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 35A, 10V 16.5mOhm @ 53A, 10V
Vgs(th) (Max) @ Id 4V @ 39µA 4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 48 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2070 pF @ 40 V 3230 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 71W (Tc) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3

Related Product By Categories

DMP2004K-7
DMP2004K-7
Diodes Incorporated
MOSFET P-CH 20V 600MA SOT23-3
STU7N60M2
STU7N60M2
STMicroelectronics
MOSFET N-CH 600V 5A IPAK
FDBL0260N100
FDBL0260N100
onsemi
MOSFET N-CH 100V 200A 8HPSOF
NVMFS5C423NLWFAFT3G
NVMFS5C423NLWFAFT3G
onsemi
MOSFET N-CH 40V 31A/150A 5DFN
STP5N60M2
STP5N60M2
STMicroelectronics
MOSFET N-CH 600V 3.7A TO220
IRFU3709
IRFU3709
Infineon Technologies
MOSFET N-CH 30V 90A IPAK
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
SI1305EDL-T1-E3
SI1305EDL-T1-E3
Vishay Siliconix
MOSFET P-CH 8V 860MA SC70-3
SIB412DK-T1-E3
SIB412DK-T1-E3
Vishay Siliconix
MOSFET N-CH 20V 9A PPAK SC75-6
BSL305SPEH6327XTSA1
BSL305SPEH6327XTSA1
Infineon Technologies
MOSFET P-CH 30V 5.3A TSOP-6
AUIRFSL4010-313TRL
AUIRFSL4010-313TRL
Infineon Technologies
MOSFET N-CH 100V 180A TO262
RJ1L08CGNTLL
RJ1L08CGNTLL
Rohm Semiconductor
MOSFET N-CH 60V 80A LPTL

Related Product By Brand

IDW60C65D1
IDW60C65D1
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR
IRL3714ZS
IRL3714ZS
Infineon Technologies
MOSFET N-CH 20V 36A D2PAK
IRS21952SPBF
IRS21952SPBF
Infineon Technologies
IC GATE DRVR HALF BRD/LOW 16SOIC
MB90F020CPMT-GS-9136
MB90F020CPMT-GS-9136
Infineon Technologies
IC MCU 120LQFP
MB90347DASPFV-GS-112E1
MB90347DASPFV-GS-112E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB91F469GBPB-GSER-270571
MB91F469GBPB-GSER-270571
Infineon Technologies
IC MCU 32B 2.112MB FLASH 320PBGA
CY91F594BHPMC-GSE1
CY91F594BHPMC-GSE1
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 208LQFP
S29GL01GS11DHIV13
S29GL01GS11DHIV13
Infineon Technologies
IC FLASH 1GBIT PARALLEL 64FBGA
CY7C4022KV13-933FCXI
CY7C4022KV13-933FCXI
Infineon Technologies
IC SRAM 72MBIT PARALLEL 361FCBGA
CY7C2665KV18-450BZXI
CY7C2665KV18-450BZXI
Infineon Technologies
IC SRAM 144MBIT PARALLEL 165FBGA
CY7C1041B-15ZC
CY7C1041B-15ZC
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44TSOP II
CY7C1472V33-200AXCT
CY7C1472V33-200AXCT
Infineon Technologies
IC SRAM 72MBIT PARALLEL 100TQFP