IPP12CNE8N G
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Infineon Technologies IPP12CNE8N G

Manufacturer No:
IPP12CNE8N G
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP12CNE8N G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 85V 67A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):85 V
Current - Continuous Drain (Id) @ 25°C:67A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12.9mOhm @ 67A, 10V
Vgs(th) (Max) @ Id:4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4340 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number IPP12CNE8N G IPP16CNE8N G  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V 85 V
Current - Continuous Drain (Id) @ 25°C 67A (Tc) 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 12.9mOhm @ 67A, 10V 16.5mOhm @ 53A, 10V
Vgs(th) (Max) @ Id 4V @ 83µA 4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 48 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4340 pF @ 40 V 3230 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3

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